A novel cubic X-ray detector diode with isotropic response for high-energy radiation dosimetry

Peter Norlin,O Oberg,Stephane Junique,Wlodek Kaplan, Jon Andersson, Gert Nilsson

Solid-State Sensors, Actuators and Microsystems（2013）

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摘要

A novel X-ray detector diode, optimized for angular independent (isotropic) dose response, is presented. The diode is designed as a silicon cube with pn-junctions on all six sides, which creates a close to 3D symmetrical device. The cube edge is 300 μm or 410 μm. It is manufactured by a micromachining based process featuring deep reactive ion etching of silicon-on-insulator substrates, doping of vertical walls from gas phase and refill of etched trenches with polysilicon. For 6 MV X-rays, in the ±30° beam angle range, the variation in detector response was at best ±0.5% for a cubic diode compared to ±3.3% for conventional diodes, a factor 7 improvement.

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关键词

x-ray detection,dosimetry,elemental semiconductors,etching,micromachining,p-n junctions,semiconductor device manufacture,semiconductor diodes,semiconductor doping,silicon,silicon-on-insulator,sputter etching,3d symmetrical device,si,angular independent dose response,cubic x-ray detector diode,deep reactive ion etching,high-energy radiation dosimetry,isotropic dose response,micromachining based process,pn-junction,silicon-on-insulator substrate,size 300 mum,size 410 mum,vertical wall doping,voltage 6 mv,x-ray detector,angular independence,cube,diode,isotropic response,radiation therapy,pn junction,x ray detector,silicon on insulator,x ray detectors,detectors

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