A Compact a-IGZO TFT Model Based on MOSFET SPICE Template for Analog/RF Circuit Designs
Electron Device Letters, IEEE（2013）
Abstract
This letter presents a compact model for flexible analog/RF circuits design with amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). The model is based on the MOSFET LEVEL=3 SPICE model template, where parameters are fitted to measurements for both dc and ac characteristics. The proposed TFT compact model shows good scalability of the drain current for device channel lengths ranging from 50 to 3.6 μm. The compact model is validated by comparing measurements and simulations of various TFT amplifier circuits. These include a two-stage cascode amplifier showing 10 dB of voltage gain and 2.9 MHz of bandwidth.
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Key words
MOSFET,SPICE,amorphous semiconductors,amplifiers,gallium compounds,indium compounds,semiconductor device models,thin film transistors,zinc compounds,InGaZnO,MOSFET SPICE level = 3 template,TFT amplifier circuits,ac characteristics,amorphous indium-gallium-zinc oxide thin-film transistors,analog/RF circuit designs,bandwidth 2.9 MHz,compact a-IGZO TFT model,dc characteristics,gain 10 dB,two-stage cascode amplifier,Amorphous indium–gallium–zinc oxide (a-IGZO),analog circuit design,device modeling,flexible electronics,thin-film transistors (TFTs)
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