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Process Integration of Backside Illuminated Image Sensor with Thin Wafer Handling Technology

2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)(2013)

Cited 5|Views21
Key words
CMOS image sensors,copper,integrated circuit bonding,scanning electron microscopy,soldering,three-dimensional integrated circuits,tin,CMOS image sensor,Cu-Sn,IR inspection,SEM image,TSV,ZoneBond technology,backside illuminated image sensor,bonding material,bonding process,glass carrier substrate,pocess integration,silicon carrier wafer,size 1 mum,size 500 mum,size 6.4 mum,solder microbump,thermal plastic material flow,thin wafer handling technology,thinning process,void free bonding
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