InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

K Klaime,C Calo,Rozenn Piron,C Paranthoen,D Thiam,Thomas Batte,O Dehaese,J Le Pouliquen,S Loualiche, A Le Corre,K Merghem, Alfonso Martinez,A Ramdane

Indium Phosphide and Related Materials（2013）

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Abstract

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

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Key words

iii-v semiconductors,high-speed optical techniques,indium compounds,laser beams,laser cavity resonators,laser mode locking,optical fibre dispersion,quantum dot lasers,(113)b inp substrate,fp lasers,inas-inp,inp,intracavity dispersion compensation,laser diodes,passive mode-locking,propagation,pulse widths,quantum dot mode-locked lasers,repetition rates,self-starting pulses,single section fabry-perot lasers,single-mode fiber,size 1 mm,size 2 mm,time 1.5 ps,mode-locking,quantum dots (qds),semiconductors laser,mode locking,single mode fiber,radio frequency

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