A new four-side abuttable ASIC for high-resolution multi-energy CT imaging detector arrays

Nuclear Science Symposium and Medical Imaging Conference(2012)

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Abstract
We have developed a new readout ASIC for multienergy CT applications, which can be flip-chip bonded directly to a two-dimensional solid-state pixel detector. Its initial intended use is in CT breast imaging. This chip has an array of 80 × 96 readout channels with a pitch of 0.2 mm × 0.2 mm. The design uses through-silicon vias for the ASIC's power, bias and digital 1/0 connections to allow for a fully abuttable layout with a die size of 19.1 mm × 16.3 mm. Each channel has a charge-sensitive amplifier with individually adjustable parameters such as gain and baseline offset. The amplifiers are designed for count rates up to 1.25 × 108 photons per second per square millimeter (5 × 106 photons per second per pixel). The amplifier signals are discriminated by four comparators and counted in 12-bit pulse counters. The readout dead time is kept at negligible levels by copying each counter's data to its own dedicated readout register at the end of each count period, for readout during the following period. Reading the more than 30,000 registers can be accomplished in less than 0.5 ms, allowing for a frame rate of 2000 frames per second.
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Key words
amplifiers,application specific integrated circuits,biomedical electronics,computerised tomography,flip-chip devices,mammography,nuclear electronics,semiconductor counters,vias,2d solid state pixel detector,asic bias connections,asic digital connections,asic power connections,ct breast imaging,ct imaging detector arrays,amplifier signal,charge sensitive amplifier,flip chip bonding,four side abuttable asic,high resolution detector arrays,multienergy detector arrays,readout asic,readout channels,readout dead time,size 16.3 mm,size 19.1 mm,through silicon vias
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