28Nm High-K Metal Gate RRAM with Fully Compatible CMOS Logic Processes

Chin Yu Mei,Wen Chao shen,Y. -D. Chih,Ya-Chin King,Chrong Jung Lin

International Symposium on VLSI Technology, Systems, and Applications（2013）

引用 7|浏览20

关键词

CMOS logic circuits,hafnium compounds,high-k dielectric thin films,random-access storage,titanium compounds,2-transistor logic ReRAM cell,CMOS logic processes,CMOS technology,CMOS transistors,HKMG,RRAM set-reset operation,SOC logic-NVM applications,TiN-HfO2-TiN,composite resistive gate dielectric film,high-k gate dielectric,high-k metal gate RRAM,logic IP,logic circuits,resistive memory states,size 28 nm

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