Ultra-low-power Switching and Complementary Resistive Switching RRAM by Single-Stack Metal-Oxide Dielectric

C. Y. Tsai, K. C. Huang,Y. W. Ting,Y. W. Liao, C. Y. Chang, J. J. Yang,P. Y. Lai, H. W. Chen, B. T. Tang, Y. W. Chang,C. P. Hsieh, W. C. Huang, Y. H. Lin,K. C. Tu, C. Y. Hsu, S. C. Liu, J. J. Chen, W. T. Chu,Y. Tsai, F. J. Shiu, C. J. Wang, C. S. Tsai, T. C. Ong, H. Y. Hwang, C. Chang,L. C. Tran

International Symposium on VLSI Technology, Systems, and Applications（2013）

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关键词

random-access storage,complementary resistive switching RRAM,defect engineering technology,metal oxide RRAM,resistance window,single stack metal oxide dielectric,single tack metal oxide,stable high temperature disturbance,ultra low power switching

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