Study of TSV filling performance with wide-range pattern densities by using a novel plating chamber with surface paddle agitation

Yiuhsiang Chang,Yuchen Hsin,Chienchou Chen,Juichin Chen,P Chang,Peijer Tzeng,Suechen Liao, Shinchiang Chen,Chungchih Wang,Tzuchien Hsu,Yuming Lin,E Chen,Chahsin Lin,Tzukun Ku

VLSI Technology, Systems, and Applications（2013）

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摘要

TSV (through silicon via) metallization is one key process in 3DIC integration. Due to high aspect ratio and filling volume, TSV copper plating is the most time-consuming module in the whole process flow. To increase the throughput of electroplating, tool configurations and plating chemistry should be optimized. In this work, an electroplating chamber with a novel paddle design is used in this experiment to study the effects of paddle agitation on plating performance. The influence of this paddle design on different TSV pattern density and geometric scheme are also investigated.

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关键词

copper,electroplating,three-dimensional integrated circuits,3dic,cu,tsv metallization,electroplating chamber,plating chemistry,surface paddle agitation,through-silicon-via,metallization,through silicon via,chemicals

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