Drain stress influence on read disturb defectivity

M De Tomasi,R E Vaion,L Cola,P Zabberoni, A Mervic

Reliability Physics Symposium（2013）

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摘要

Introduction of Error Correction Code (ECC) on new flash memory has changed the dominant failure mode: single defective bits are corrected, intrinsic behavior affects reliability performance. In this paper we focused on the relationship between traps generated by Drain Stress during program operation and soft program induced by continuous reading. Particular focus has been given on new approach to improve reliability performance.

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关键词

error correction codes,flash memories,integrated circuit reliability,ecc,continuous reading,dominant failure mode,drain stress influence,error correction code,flash memory,intrinsic behavior,program operation,read disturb defectivity,reliability performance improvement,soft program,drain stress,gate stress,read disturb,computer architecture,stress,reliability,logic gates

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