In Situ Capped GaN-based Metal-Insulator-semiconductor Heterostructure Field-Effect Transistor
2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013)（2013）
Key words
III-V semiconductors,MISFET,aluminium compounds,gallium compounds,high electron mobility transistors,microwave field effect transistors,millimetre wave field effect transistors,wide band gap semiconductors,AlGaN-GaN,GaN,HFET,Mg,frequency 20.5 GHz,frequency 33.3 GHz,gain 10.3 dB,in situ grown heterostructure field-effect transistor,metal-insulator-semiconductor heterostructure field-effect transistor,voltage 10 V
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