30.3% PAE HBT Doherty power amplifier for 2.5∼2.7 GHz mobile WiMAX
Microwave Symposium Digest（2010）
Abstract
The Doherty power amplifier for mobile WiMAX application is fully integrated in 1.2×1.2 mm2 using a 2-μm InGaP/GaAs HBT process. The direct input power dividing technique is employed on a chip. Broadband input and output matching techniques are used for broadband Doherty operation. A 1.5 times larger peaking amplifier than carrier amplifier is used to have high efficiency for IEEE 802.16e m-WiMAX signal, which has 9.6 dB crest factor and 8.75 MHz bandwidth. The PA with a supply voltage of 3.4 V has an EVM of 2.3% and a PAE of 31.5% at an output power of 24.75 dBm and an operating frequency of 2.6 GHz. The PAE of over 30.3% and the output power of over 24.6 dBm with the EVM of lower than 3.15% and the gain variation of 0.2 dB are achieved across 2.5~2.7 GHz without any assistant technique for linearization.
MoreTranslated text
Key words
indium compounds,efficiency 30.3 percent,mobile communication,wide band gap semiconductors,wimax,mobile wimax,efficient,size 2 mum,ieee 802.16e m-wimax signal,frequency 2.5 ghz to 2.7 ghz,pae hbt doherty power amplifier,gallium arsenide,handset,power amplifiers,broadband output matching techniques,ingap-gaas,doherty,peaking amplifier,voltage 3.4 v,heterojunction bipolar transistors,broadband input matching techniques,iii-v semiconductors,hetero-junction bipolar transistors (hbt),mobile radio,carrier amplifier,mmic,linear,direct input power dividing technique,bandwidth 8.75 mhz,power amplifier (pa),broadband doherty operation,wideband amplifiers,broadband,lineaer,ieee standards,mmic amplifiers,hbt process,uhf amplifiers,gain 0.2 db,power amplifier,chip,harmonic analysis,voltage,bipolar transistor,frequency,bandwidth,impedance matching,power generation
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined