High-Electron-Mobility In0.53ga0.47as/In0.8ga0.2as Composite-Channel Modulation-Doped Structures Grown By Metal-Organic Vapor-Phase Epitaxy
Indium Phosphide & Related Materials（2010）
Abstract
Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1-xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm(2)/Vs at the sheet carrier concentration (Ns) of 2.1x10(12) cm(-2), which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.
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Key words
III-V semiconductors,MOCVD,composite materials,electron mobility,gallium arsenide,indium compounds,semiconductor epitaxial layers,semiconductor growth,vapour phase epitaxial growth,In0.53Ga0.47As-In0.8Ga0.2As,MOVPE,high electron mobility composite-channel modulation-doped structures,metal-organic vapor-phase epitaxy,temperature 293 K to 298 K
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