A key of self-formed barrier technique for reliability improvement of CU dual damascene interconnects

Kazuyuki Ohmori,Kenichi Mori,Kazuyoshi Maekawa,Kazuyuki Kohama,Kei Ito,Takashi Ohnishi,Masaaki Mizuno,Masahiko Fujisawa,Masanori Murakami,Hiroshi Miyatake

Interconnect Technology Conference（2010）

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摘要

We have studied key factors of Ti-based self-formed barrier technique on interconnect reliability. A performance of time dependent dielectric breakdown shows superior endurance, using quite a thin Ti-based self-formed barrier. However, to achieve a superior electromigration performance using Ti-based self-formed barrier, much more amount of Ti is needed compared with that of TDDB performance. This is why the control of excess Ti atoms is important to suppress the electromigration. We also discuss the mechanism that why the excess Ti improve reliability performance.

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关键词

copper,electromigration,integrated circuit interconnections,reliability,titanium,cu,cu dual damascene interconnects,ti,ti-based self-formed barrier technique,electromigration performance,interconnect reliability,reliability improvement,thin ti-based self-formed barrier,time dependent dielectric breakdown,failure analysis,resistance,reliability engineering,dielectrics,annealing,chemical vapor deposition,dielectric breakdown,atomic layer deposition,films

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