Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Injun Hwang,Jaejoon Oh,H S Choi,Joonyong Kim,Soogine Chong,Jaikwang Shin,Uin Chung

Electron Device Letters, IEEE（2013）

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摘要

A pathway to increase the threshold voltage (VTH) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of VTH in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge. We demonstrate that a bridged p-GaN gate HEMT structure increases the VTH from 0.93 to 2.44 V.

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关键词

iii-v semiconductors,gallium compounds,high electron mobility transistors,wide band gap semiconductors,gan,high-electron-mobility transistor,hole depletion width,increased threshold voltage,source-connected gate hemt,voltage 0.93 v to 2.44 v,high-electron-mobility transistor (hemt),schottky contact,p-gan bridge,p-gan gate hemt,source-connected p-gan,threshold voltage,high electron mobility transistor,logic gates,gold

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