A novel MTJ for STT-MRAM with a dummy free layer and dual tunnel junctions

Kazuyuki Tsunoda,Hideyuki Noshiro,Chikako Yoshida,Y Yamazaki,Atsushi Takahashi,Yoshihisa Iba,A Hatada,M Nakabayashi,Takashi Takenaga,M Aoki,Toshihiro Sugii

Electron Devices Meeting（2012）

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摘要

A novel magnetic tunnel junction (MTJ) for embedded memory applications such as spin transfer torque magneto-resistive random access memory (STT-MRAM) is proposed. It consists of a dummy free layer and dual tunnel junctions using perpendicular magnetic anisotropy at the CoFeB/MgO interface. A fabricated MTJ with 53 nm diameter exhibited a high thermal stability factor Δ = 52 and a small switching current Ic0 = 57 μA, resulting in an Δ/Ic0 ratio of 0.91, which is more than twice that of the reference MTJ. This MTJ simultaneously provides an excellent Δ/Ic0 ratio, low-voltage switching (0.34 V at 100 ns), and good manufacturability.

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关键词

mram devices,cobalt compounds,iron compounds,magnesium compounds,magnetic tunnelling,cofeb-mgo,mtj,stt-mram,current 57 mua,dual tunnel junctions,dummy free layer,embedded memory applications,magnetic tunnel junction,perpendicular magnetic anisotropy,spin transfer torque magneto-resistive random access memory,thermal stability factor,time 100 ns,voltage 0.34 v

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