Impact of Stray Field on the Switching Properties of Perpendicular MTJ for Scaled MRAM
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2012）
关键词
MRAM devices,etching,magnetic switching,magnetic tunnelling,perpendicular magnetic anisotropy,torque,balanced spin-torque switching current,detrimental effect,etching process,in-plane component,out-of-plane component degrades,perpendicular MTJ,perpendicular magnetic tunnel junctions,pinned layer stability,robust pinned layer performance,scaled MRAM,size 80 nm,spin-transfer torque switching,stray field engineering,switching properties,symmetrical R-H loop
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要