A CIGS thin film solar cell with dual absorber layers

Jianyuan Wang,Jyitsong Lin,Yusheng Kuo,Chingyao Pai,Yichuen Eng

Solid-State and Integrated Circuit Technology（2012）

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摘要

In this work, we made a CIGS thin film solar cell with dual absorber layers which added an InGaP layer between buffer layer and CIGS layer. That is, the conventional structure of ZnO/CdS/CIGS/Mo becomes the structure of ZnO/CdS/InGaP/CIGS/Mo. And we translate the thickness and doping concentration of the additional InGaP absorber layer to find out critical parameter. Due to the presence of the additional 0.06 μm thick InGaP layer with acceptor concentration 2 × 1016 cm-3, the increased efficiency is observed. According to simulations, the wavelength of EQE in 0.3 μm ~ 0.5 μm for our proposed CIGS solar cell is improved when compared with the conventional CIGS solar cell. And the conversion efficiency increased from 9.27% to 11.18%.

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关键词

ii-vi semiconductors,iii-v semiconductors,buffer layers,cadmium compounds,copper compounds,doping profiles,gallium compounds,indium compounds,molybdenum,semiconductor thin films,semiconductor-metal boundaries,solar cells,ternary semiconductors,thin film devices,zinc compounds,cigs thin film solar cell,eqe wavelength,zno-cds-ingap-cu(inga)se2-mo,acceptor concentration,buffer layer,conversion efficiency,doping concentration,dual absorber layer

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