Nanowire Photodetector Prepared on Template
Sensors Journal, IEEE(2013)
Abstract
The authors report the growth of β-Ga2O3 nanowires using a vapor phase transport method on SiO2/Si template. It is found that average diameter, average length, and density of the nanowires all increased as we increase the growth temperature. β-Ga2O3 nanowire solar-blind photodetectors with a sharp cutoff at 255 nm are also fabricated. With an incident light wavelength of 255 nm and an applied bias of 5 V, it is found that measured responsivity of the photodetector prepared at 950°C is 3.43×102O3 A/W.
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Key words
gallium compounds,nanowires,photodetectors,silicon compounds,ga2o3,average diameter,average length,growth temperature,incident light wavelength,nanowire photodetector,sharp cutoff,vapor phase transport method,voltage 5 v,wavelength 255 nm,$betahbox{-}{rm ga}_{2}{rm o}_{3}$,uv photodetectors,nanowire,silicon,gold,temperature measurement
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