Use of a transistor array to predict infant transistor mortality rate in InGaP/GaAs heterojunction bipolar transistor technology
Monterey, CA, USA(2008)
摘要
A novel circuit for measuring current gain, β on wafer for a very large number of individual transistors in InGaP/GaAs HBT Technology is presented. The circuit allows for accurately measuring β for as many as 25,000 individual transistors on a single wafer. The circuit gives good predictive capability of the infant failure rate of a given wafer without running a costly, time consuming reliability test or burn-in screen.
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关键词
stress,pediatrics,transistors,testing,time measurement,heterojunction bipolar transistor,gallium arsenide,resistors,mortality rate,failure rate
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