A 120µW fully-integrated BPSK receiver in 90nm CMOS

Han Yan,J G Maciasmontero,A Akhnoukh,Leo C N De Vreede,John R Long,John J Pekarik,J N Burghartz

Radio Frequency Integrated Circuits Symposium（2010）

引用 18|浏览14

暂无评分

摘要

In this work a highly integrated, ultra-low-power BPSK receiver for short-range wireless communications is presented. The receiver consists of a power divider, two injection-locked RC oscillators with limiting buffers and an XOR output stage. The demodulation principle is based on the dynamic phase response of the two BPSK signal injected oscillators. As proof of concept, a 300 MHz receiver was implemented in a 90nm CMOS technology. The whole receiver has an active die area of 0.04 mm2, a sensitivity of -34 dBm at 1Mbps and consumes only 120 μW from 1V supply, which relates to an energy per bit of only 0.12 nJ/bit, a value which is among the best reported up-to-date for low-transmission rate systems.

查看译文

关键词

cmos integrated circuits,buffer circuits,injection locked oscillators,phase shift keying,power dividers,radio receivers,bpsk receiver,cmos,xor output stage,injection-locked rc oscillators,limiting buffers,power 120 muw,power divider,short-range wireless communications,size 90 nm,bpsk,cmos integrated circuit,low-power rf,injection-locked oscillator,binary phase shift keying,rf signals,injection locked oscillator,proof of concept,oscillations,cmos technology,wireless sensor networks,demodulation,injection locking,wireless communication,radio frequency

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要