Global parameter extraction for a multi-gate MOSFETs compact model

Shijing Yao,Tanvir H Morshed,Darsen D Lu,S Venugopalan,W Xiong,C R Cleavelin,Ali M Niknejad,Chenming Hu

Microelectronic Test Structures（2010）

引用 16|浏览26

暂无评分

摘要

A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.

查看译文

关键词

mosfet,semiconductor device models,finfet,l-dependent properties,channel lengths,gate length,global i-v parameter extraction,multigate mosfet compact model,bsim-cmg,global extraction,multi-gate,fitting,length measurement,mathematical model,logic gates,parasitic capacitance,data models,surface resistance,circuits,data mining,degradation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要