Temperature dependent linear HEMT model extracted with multi-temperature optimization
Microwave Conference Proceedings(2012)
Abstract
Temperature dependent model is conventionally developed with 1) individual linear model extraction at each temperature and 2) temperature dependence extraction for each model parameter. A novel approach based on a multi-temperature optimization is proposed in this study. The new approach is faster and more accurate since the linear models at different temperatures are extracted simultaneously and inter-relatedly. It has been found, based on the model extracted, that there is a specific gate-source voltage of Vgs0, where the transconductance (Gm) keeps constant versus temperature. Gm increases (decreases) with temperature for Vgs<;Vgs0 (Vgs>;Vgs0). With increasing temperature, a substantial decrease in extrinsic inductance is also observed. Our findings are believed to be useful for designing HEMT amplifiers with less temperature dependence.
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Key words
amplifiers,circuit simulation,high electron mobility transistors,inductance,optimisation,semiconductor device models,hemt amplifiers,extrinsic inductance,gate-source voltage,multitemperature optimization,specific gate-source voltage,temperature dependent linear hemt model extraction,transconductance,hemts,parameter extraction,semiconductor device model,temperature dependence
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