Thermal Sensor Using Poly-Si Thin-Film Transistors With Self-Aligned and Offset Gate Structures
Sensors Journal, IEEE(2013)
Abstract
We propose a thermal sensor using poly-Si thin-film transistors (TFTs) with self-aligned and offset gate structures. First, the temperature dependences of the transistor characteristic are compared between the self-aligned and offset TFTs. It is found that both the TFTs have the temperature dependence of the off-leakage current, whereas the off-leakage current of the self-aligned TFT is larger than that of the offset TFT. Next, the self-aligned and offset TFTs are included in a cell circuit to detect the temperature utilizing the off-leakage current, which is composed of a pair of 1-transistor and 1-capacitor. It is found that low and high temperatures can be detected using the self-aligned and offset TFTs, respectively. We think that it is promising to integrate this thermal sensor in certain applications using TFTs.
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Key words
elemental semiconductors,silicon,temperature sensors,thin film transistors,1-capacitor,1-transistor,si,off-leakage current,offset tft,offset gate structures,poly-tft,polythin-film transistors,self-aligned tft,self-aligned gate structures,temperature dependences,thermal sensor,offset gate,poly-si,self-aligned gate,temperature,thin-film transistor (tft),temperature measurement
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