On-Resistance in the ALDMOST
Le Journal De Physique Colloques(1988)
摘要
Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the oxide thickness and the additional semi-insulating layer along the surface of the gate oxide above the drift region. This layer has been introduced in order to lower the high ON-resistance which is in general a disadvantage of this type of MOS transistors.
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关键词
current density,dielectrics,power mosfet,solid modeling,threshold voltage,geometry,gaussian distribution,electrons
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