Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation
Lester Eastman Conference High Performance Devices（2012）
摘要
We report a new passivation technology based on atomic layer deposition (ALD) aluminum oxide for the GaN high electron-mobility transistor (HEMT). This new process markedly enhances GaN device's electrical performance including DC, and in particular the pulsed-IV characteristics. The achieved improvement is attributed to the outstanding interface between III-N and the ALD aluminum oxide resulting from the unique process of the ALD growth, featuring a wet-chemical-based wafer preparation as well as the self-cleaning at the very beginning of the whole growth process.
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关键词
III-V semiconductors,aluminium compounds,atomic layer deposition,gallium compounds,high electron mobility transistors,semiconductor growth,wide band gap semiconductors,ALD aluminum oxide,Al2O3,GaN,HEMT,atomic layer deposition aluminum oxide,high electron-mobility transistors,pulsed-IV characteristics,wet-chemical-based wafer preparation,ALD,GaN,HEMT,aluminum oxide,atomic layer deposition,gallium nitride,high electron-mobility transistor,pulsed-IV
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