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Broadband Time-Domain Measurement System for the Characterization of Nonlinear Microwave Devices With Memory

IEEE Transactions on Microwave Theory and Techniques(2010)

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摘要
This paper describes a novel fully calibrated four channel broadband time-domain measurement system for the characterization of nonlinear microwave devices with memory. The hardware architecture of the proposed time-domain measure- ment system is based on a wideband sub-sampling principle. The sampling heads work at a high strobe signal repetition frequency that can be tuned between 357-536 MHz. We achieve a 40-GHz RF frequency bandwidth and a 160-MHz IF bandwidth. This instrument enables the measurement of carrier and envelope waveforms at both ports of nonlinear microwave devices driven by broadband modulated multicarriers. The test-bench is applied to the cross modulation characterization of a 15-W GaN HEMT CREE -band power amplifier with memory due to different biasing circuit configurations. The amplifier under test is driven by the sum of a large-signal modulated carrier (double-sideband amplitude modulation at 3.6 GHz) and a small single-tone signal at a 110-MHz offset frequency. Our significant contribution comes from the capability of the measurement system to record the time-domain waveforms of several nonadjacent modulated signals on a similar time equivalent scale for different cases of memory effects of the power amplifier under test.
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III-V semiconductors,gallium compounds,high electron mobility transistors,microwave power amplifiers,signal processing equipment,time-domain analysis,wide band gap semiconductors,wideband amplifiers,GaN,HEMT CREE S-band power amplifier,IF bandwidth,RF frequency bandwidth,bandwidth 160 MHz,broadband modulated multicarriers,broadband time-domain measurement system,cross modulation characterization,frequency 110 MHz,frequency 357 MHz to 536 MHz,frequency 40 GHz,hardware architecture,high strobe signal repetition frequency,memory effects,nonlinear microwave devices,power 15 W,time-domain waveforms,wideband subsampling principle,Broadband sub-sampling,GaN power amplifiers,memory effects,nonlinear microwave circuits,time-domain measurements
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