X-band receiver module in fully depleted silicon on insulator technology

A Mattamana,K M Groves,P L Orlando,V J Patel,T Quach,Paul Watson, Larry D Johnson,P W Wyatt,C K Chen,R Drangmeister,Craig L Keast

SOI Conference（2012）

Cited 0|Views43

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Abstract

This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter, and an IF amplifier. The X-band receiver front end module yielded a gain of 13.5-15 dB, 5.2-5.8 dB noise figure (NF), across the frequency band (3.7-4.3 GHz).

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Key words

cmos integrated circuits,field effect mmic,radio receivers,silicon-on-insulator,fd soi cmos technology,if amplifier,lna,mmic,marchand balun,rf components,x-band low noise amplifier,x-band receiver front end module,balanced amplifiers,double balanced mixer,frequency 3.7 ghz to 4.3 ghz,fully depleted silicon-on-insulator technology,fully-depleted soi cmos technology,gain 13.5 db to 15 db,high dynamic range x-band receiver module,integrated wideband x-band receiver,microwave monolithic integrated circuit,noise figure,noise figure 5.2 db to 5.8 db,nonreflective filter,radiofrequency components,size 180 nm,balun,cmos,fdsoi,filter,low noise amplifier,mixer,rf receiver,single down conversion,silicon on insulator

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