X-band Receiver Module in Fully Depleted Silicon on Insulator Technology
2012 IEEE International SOI Conference (SOI)（2012）
Key words
CMOS integrated circuits,field effect MMIC,radio receivers,silicon-on-insulator,FD SOI CMOS technology,IF amplifier,LNA,MMIC,Marchand balun,RF components,X-band low noise amplifier,X-band receiver front end module,balanced amplifiers,double balanced mixer,frequency 3.7 GHz to 4.3 GHz,fully depleted silicon-on-insulator technology,fully-depleted SOI CMOS technology,gain 13.5 dB to 15 dB,high dynamic range X-band receiver module,integrated wideband X-band receiver,microwave monolithic integrated circuit,noise figure,noise figure 5.2 dB to 5.8 dB,nonreflective filter,radiofrequency components,size 180 nm,Balun,CMOS,FDSOI,Filter,Low Noise Amplifier,Mixer,RF receiver,Single Down Conversion
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined