Mode engineering for hybrid SOI/III-V optical devices

S J Spector,R B Swint,C L Chen,J J Plant,T M Lyszczarz,P W Juodawlkis

SOI Conference（2012）

Cited 0|Views31

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Abstract

Optical amplifiers are demonstrated by direct bonding III-V gain layers to SOI waveguides which include 2-D and 3-D adiabatic tapers. The 3-D tapers have a low loss of 0.1 dB per mode conversion, the lowest demonstrated for coupling between SOI waveguides of this type. The 2-D tapers are used to control interaction with the III-V gain region. An integrated amplifier delivered 14 dB intra chip gain using the new adiabatic tapered waveguides.

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Key words

iii-v semiconductors,optical fibre amplifiers,optical waveguides,silicon-on-insulator,2d adiabatic tapers,3d adiabatic tapers,soi waveguides,adiabatic tapered waveguides,direct bonding iii-v gain layers,gain 14 db,hybrid soi-iii-v optical devices,integrated amplifier,intra-chip gain,mode engineering,optical amplifiers,silicon on insulator

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