Growth and properties III–V films and multilayered structures on fianite substrates and buffer layers

Yu N Buzynin,A N Buzynin,V V Osiko,M N Drozdov,E E Lomonova,O I Khrykin,B N Zvonkov

Nanoelectronics Conference（2010）

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摘要

The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure and morphology of YSZ buffer layers. It is shown, that III-V films received on YSZ substrates and buffer layers have single crystalline structure, good morphology and high electrophysical and photoluminescent properties. The use of the two-layer buffer in comparison with the single YSZ buffer improves adhesion of III-V films and raises its structural and electric homogeneity.

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关键词

iii-v semiconductors,mocvd,aluminium compounds,crystal structure,gallium arsenide,gallium compounds,indium compounds,multilayers,photoluminescence,semiconductor epitaxial layers,semiconductor growth,algaas,aln,gaas,gan,gasb,iii-v films,inas,ingaas,mocvd method,adhesion,buffer layers preparation,crystalline structure,electric homogeneity,electrophysical property,epitaxy,fianite substrates,multilayered structures,porous material,porous substrate,epitaxial growth,silicon

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