Fianite in electronics and photonics

A N Buzynin,V V Osiko,Yu N Buzynin,M N Drozdov,E E Lomonova,O I Khrykin,M A Trishenkov,B N Zvonkov

Nanoelectronics Conference（2010）

引用 0|浏览10

暂无评分

摘要

Many of conventional dielectric materials already exhausted their resources for electronics. For instance, based on Si/SiO2/Si devices approached to their physical limits. Therefore further progress in this area is connected with application of new materials. Fianite, or yttria-stabilized zirconia (hafnia) (YSZ (H)), having unique combination of physical and chemical properties, is multifunctional material for new technologies. It can be used in nanoelectronic and nanophotonic as: monolithic substrate and buffer layers for Si and III-V epitaxy; gate dielectric; alternative to SiO2 isolating layer; protective layer. Some possibilities of application of fianite in these directions are investigated in the present article.

查看译文

关键词

iii-v semiconductors,aluminium compounds,arsenic compounds,dielectric thin films,epitaxial layers,gallium arsenide,gallium compounds,indium compounds,nanoelectronics,nanophotonics,optical films,optical materials,photodetectors,protective coatings,semiconductor epitaxial layers,silicon,silicon compounds,solar cells,transparency,wide band gap semiconductors,yttrium compounds,zirconium compounds,alxga1-xas,algaas-ingaas-gaas,gaas1-xn,gan,iii-v epitaxy,inxga1-xas,inas,y2o3-zro2,y2o3-zro2-gaas,y2o3-zro2-si,buffer layers,dielectric materials,fianite,gate dielectrics,hafnia,isolating layer,monolithic substrate,multifunctional material,protective layer,yttria-stabilized zirconia,yttria stabilized zirconia,films,chemical properties

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要