Impact of transistor reliability on RF oscillator phase noise degradation

V S Reddy,Nathan R Barton,Stephen P Martin,C M Hung,A Krishnan,Cathy A Chancellor,Shyam Sundar, A Tsao, D Corum,Naveen Yanduru, S Madhavi,S Akhtar, N P Pathak,P Srinivasan, S Shichijo,Kamel Benaissa,Anindya Lal Roy,Tapan K Chatterjee,R Taylor,J T Krick,Jeffrey E Brighton,J C Ondrusek, D J Barry,S Krishnan

Electron Devices Meeting（2009）

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摘要

The impact of deep sub-micron CMOS transistor reliability on RF oscillator phase noise degradation is demonstrated along with the importance of off-state drain stress for large signal RF applications. Process and device optimization was successful in reducing phase noise degradation to acceptable levels.

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关键词

oscillators,phase noise,reliability,transistors,rf oscillator phase noise degradation,complementary metal-oxide-semiconductor,deep submicron cmos transistor reliability,device optimization,off-state drain stress,signal rf applications,radio frequency,degradation,stress,oscillations,complementary metal oxide semiconductor

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