0.9µm pitch pixel CMOS image sensor design methodology

K Itonaga, K Mizuta, Toyotaka Kataoka,Masashi Yanagita, Shintaro Yamauchi, Harumi Ikeda,Tsutomu Haruta,Shizunori Matsumoto, Masanori Harasawa,Takeshi Matsuda,Akira Matsumoto, I Mizuno,Takatoshi Kameshima, Iwao Sugiura,Taku Umebayashi,Keiichi Ohno,Teruo Hirayama

Electron Devices Meeting（2009）

引用 5|浏览16

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摘要

We demonstrate the first ever 0.9μm pitch pixel CMOS image sensor (CIS), and reveal the problems that are likely to be encountered in future device structures. We have developed a set of guidelines for the design of high quantum efficiency(QE) CISs, and verified their validity by comparing the image quality of 0.9, 1.12, 1.4 and 1.75μm CISs. Furthermore, we propose a simple methodology to optimize more complicated submicron pitch CIS structures.

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关键词

cmos image sensors,semiconductor device models,cmos image sensor design,quantum efficiency,submicron pitch cis structure,image quality,shape,diffraction,sensitivity,cmos image sensor,pixel,design methodology,copper

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