Firing stability of atomic layer deposited Al2O3 for c-Si surface passivation
Photovoltaic Specialists Conference（2009）
摘要
As the manufacture of most crystalline silicon solar cells involves various high temperature processes, a good thermal stability of the surface passivation is essential. In this paper we demonstrate the thermal stability of the c-Si surface passivation by atomic layer deposited Al2O3 during a firing process as applied for screen printed solar cells. The initial outstanding surface passivation quality, provided by both Al2O3 and Al2O3/a-SiNx:H stacks, remained high after firing as indicated by effective surface recombination velocities < 14 cm/s for 2 ¿·cm n-type silicon wafers.
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关键词
aluminium compounds,atomic layer deposition,passivation,silicon,solar cells,surface recombination,thermal stability,Al2O3,SiN:H,atomic layer deposition,c-Si surface passivation,crystalline silicon solar cells,firing process,firing stability,high temperature process,screen printed solar cells,surface recombination,thermal stability
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