Light extraction enhancement by the fabrication of sub-micron structures on GaN-based LEDs

Yeeuchang Lee,Mingjheng Ciou,Cinghuai Ni,Jeanshen Huang,Shenghan Tu,Jenqyang Chang,Yuchieh Huang,Kuochen Wu, Shihwen Chung,Weikai Wang,Chishen Lee

Genoa（2009）

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摘要

A cost effective and high throughput imprinting technique is integrated to conventional light emitting diodes (LEDs) chip process to enhance the light extraction efficiency. Sub-micron surface texture composed of spin on glass (SOG) is directly imprinting onto the top of transparent conductive layer (TCL). The electrical performances of LED chips are not damaged after applying the sub-micron structure. Compared to LED chips without SOG cover layer, the light extraction efficiency enhancements are 27.6% and 4.8% for LED chips with two dimensional (2D) hole-array and a planar SOG.

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关键词

iii-v semiconductors,gallium compounds,light emitting diodes,microfabrication,surface texture,wide band gap semiconductors,2d hole-array,gan,gan-based led,high throughput imprinting technique,light extraction efficiency,light extraction enhancement,planar sog,spin on glass,submicron structures,submicron surface texture,transparent conductive layer,leds,imprinting,high throughput,indium tin oxide,temperature,cost effectiveness,chip,lithography,etching,light emitting diode

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