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Correlation Of Laser Test Results With Heavy Ion Results For Nand Flash Memory

Nuclear Science, IEEE Transactions(2012)

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摘要
Pulsed laser test results for NAND flash memories are compared with broad beam heavy ion results and also with heavy ion results obtained with the collimated Milli-Beam (TM) source. The pulsed laser measurements reported here, with smaller focused spot sizes and as a function of the incident pulse energy, serve to reconcile the previously reported inconsistencies. The Milli-Beam (TM) and pulsed laser results appear to be consistent, and differences from the broad beam heavy ion results can be explained. The results suggest that the high current SEFIs reported by us and others arise from multiple ion (or multiple photon) interactions, and are not associated with single ion strikes.
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关键词
Radiation effects,Reliability,Flash memory,Nonvolatile memory,Lasers,reliability,Laser,NAND,nonvolatile memory,radiation effects
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