Limitations of LET in Predicting the Radiation Response of Advanced Devices
IEEE Transactions on Nuclear Science(2015)
摘要
The impact of high-Z metals on energy deposition in thin volumes due to direct ionization by ions in space environments is examined. The importance of energy loss straggling in small volumes typical of those found in advanced devices is also evaluated. It is found that direct ionization by protons over a large energy range may contribute significantly to error rates in advanced silicon on insulato...
更多查看译文
关键词
Silicon,Energy loss,Protons,Ionization,Tungsten
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要