Experimental demonstration of performance enhancement on highly-scaled bulk nFinFETs with novel carrier transport engineering

For the first time, the concept of source side potential energy engineering to enhance the average velocity of carriers at the beginning of the channel, known as injection velocity, while keeping the same electrostatics was proposed and realized by the process integration on highly scaled bulk nFinFETs. >7% and 4% improvement on the saturation drain current (Isat) and the ring oscillator speed was demonstrated at Vdd=0.8V under the same electrostatics due to the enhanced injection velocity. Under the same process, experimental results for the different Vdd, the temperature sensitivity and the local variability were also discussed in this work.