Electric Field Reduction in C-doped AlGaN/GaN on Si High Electron Mobility Transistors

It is shown by simulation supported by experiment that a reduced surface field (RESURF) effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon doped layer. Simulations show that this effect is not present in devices using iron doped GaN buffers explaining the higher voltage capability of carbon doped devices.