A systematic approach for analyzing and optimizing cell-internal signal electromigration
Computer-Aided Design（2014）
摘要
Electromigration (EM) in on-chip metal interconnects is a critical reliability failure mechanism in nanometer-scale technologies. This work addresses the problem of EM on signal interconnects within a standard cell. An approach for modeling and efficient characterization of cell-internal EM is developed, incorporating Joule heating effects, and is used to analyze the lifetime of large benchmark circuits. Further, a method for optimizing the circuit lifetime using minor layout modifications is proposed.
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关键词
electromigration,integrated circuit interconnections,integrated circuit layout,integrated circuit reliability,nanofabrication,Joule heating effect,cell-internal signal electromigration,circuit lifetime optimization,minor layout modification,nanometer-scale technology,on-chip metal interconnects,reliability failure mechanism
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