Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies

Pellish, J.A.,Marshall, P.W.,Rodbell, K.P., Gordon, M.S.

Nuclear Science, IEEE Transactions（2014）

Cited 29|Views6

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Abstract

We report low-energy proton and low-energy alpha particle SEE data on a 32 nm SOI CMOS SRAM that demonstrates the criticality of using low-energy protons for SEE testing of highly-scaled technologies. Low-energy protons produced a significantly higher fraction of multi-bit upsets relative to single-bit upsets when compared to similar alpha particle data. This difference highlights the importance of performing hardness assurance testing with protons that include energy distribution components below 2 MeV. The importance of low-energy protons to system-level single-event performance is based on the technology under investigation as well as the target radiation environment.

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Key words

CMOS memory circuits,SRAM chips,alpha-particle effects,integrated circuit testing,proton effects,radiation hardening (electronics),silicon-on-insulator,SOI CMOS SRAM,hardness assurance testing,highly scaled technologies,low energy protons criticality,low-energy alpha particle effects,single event effects testing,size 32 nm,Alpha particle radiation effects,proton radiation effects,radiation hardness assurance testing,silicon-on-insulator technology,single-event upset

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