Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs
Noise and Fluctuations（2011）
Abstract
On the basis of papers published on the fundamental and excess LF noise sources in compound semiconductor transistors, two main issues are addressed in this paper: i) the characterization of LF noise sources linked to parasitic effects induced by innovative component architecture in emerging technologies such as GaN-based HEMTs and GaAsSb HBTs. ii) the identification of LF noise sources linked to degradation mechanisms in compound semiconductor devices issued from mature technologies. Examples of experimental correlation between LF noise and parasitic effects (i.e. potential electrical performance penalization) or failure mechanisms in III-V HEMTs and HBTs are described with data related to recent technological developments.
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Key words
iii-v semiconductors,gallium arsenide,heterojunction bipolar transistors,high electron mobility transistors,gaas,hbt,lf noise sources,compound semiconductor hemt reliability,compound semiconductor devices,degradation mechanisms,failure mechanisms,low frequency noise,parasitic effects,potential electrical performance penalization,algan/gan hemt,inp hbt,lf noise analysis,reliability,trapping effects,emerging technology,semiconductor devices,logic gate,silicon,logic gates,stress
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