RTS and 1/f noise in Ge nanowire transistors
Noise and Fluctuations（2011）
摘要
Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO2 back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10-30% range is usually observed at drain currents below ID=1nA. For higher currents, 1/f noise becomes dominant. With the current increase, the normalized power spectral density (SI/ID2) is first independent on ID and then drops as ID-1. Considering dominant mobility fluctuations due to scattering on surface defects a Hooge parameter of 4×10-3 has been estimated.
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关键词
1/f noise,elemental semiconductors,field effect transistors,germanium,nanowires,nickel compounds,ohmic contacts,silicon,silicon compounds,1-f noise,hooge parameter,nige,rts,si-sio2,dominant mobility fluctuations,multilevel rts noise,nanowire field effect transistors,normalized power spectral density,random telegraph signal,surface defect scattering,1/ƒ noise,ge nanowire,rts noise,field effect transistor,low-frequency noise,fluctuations,logic gates,low frequency noise,ohmic contact,logic gate,power spectral density,noise
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