Integrated non-III-nitride/III-nitride tandem solar cell
Device Research Conference(2011)
Abstract
III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum. The large lattice mismatch between InN and GaN however, makes it difficult to grow good quality high In-composition InGaN films for low bandgap subcells. The integration of III-N based solar cells, which have currently been demonstrated to work well above 2.0 eV, with mature IV and III-V based solar cell technologies, which work well at bandgaps ≤ 2.0 eV, has the potential to improve the efficiency of current multi-junction solar cells. In this paper, we present the first on-wafer integration of InGaN/GaN solar cells with non-III-nitride (GaAs) solar cells.
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Key words
gallium compounds,nitrogen compounds,photovoltaic cells,solar cells,gan,iii-nitride tandem solar cell,inn,low bandgap subcells,on-wafer integration,photovoltaic device material,solar cell technologies,solar spectrum,indium tin oxide
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