TSV Process Optimization for Reduced Device Impact on 28nm CMOS

Yu, C.L.,Chang, C.H.,Wang, H.Y., Chang, J.H.

VLSI Technology（2011）

引用 35|浏览34

关键词

CMOS integrated circuits,copper,optimisation,three-dimensional integrated circuits,CMOS,TSV process optimization,keep-out zone,reduced device impact,size 28 nm,through-silicon-via process

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