Spectral analysis of noise sources in InGaN light emitting diodes

Gray Lin,Kuanlin Su,Shihtsun Yang,Tzungte Chen,Chiuling Chen

Lasers and Electro-Optics（2011）

引用 23|浏览2

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摘要

Noise characterization of InGaN light emitting diodes shows that the exponent in current dependence of low-frequency flicker noise amplitude and the corner frequency in high-frequency generation-recombination noise spectra are two possible indicators for device reliability.

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关键词

flicker noise,gallium compounds,indium compounds,light emitting diodes,semiconductor device noise,semiconductor device reliability,spectral analysis,ingan,corner frequency,current dependence,device reliability,high-frequency generation-recombination noise spectra,low-frequency flicker noise amplitude,noise characterization,noise sources,noise measurement,low frequency,high frequency,light emitting diode,low frequency noise,semiconductor devices

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