Optimization Of Pitch-Split Double Patterning Photoresist For Applications At The 16nm Node
Advanced Semiconductor Manufacturing Conference(2011)
Abstract
Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to standard bright field applications.
MoreTranslated text
Key words
double patterning, pitch-split, thermal cure, tone inversion, 16 nm node lithography
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined