Radiation hardness evaluation of a 130 nm SiGe BiCMOS technology for the ATLAS electronics upgrade

S Diez,M Ullan,A A Grillo,J Kierstead,W Kononenko,F Martinezmckinney,F M Newcomer,S Rescia, M Ruat,H F W Sadrozinski,A Seiden,E Spencer, H Spieler,M Wilder

Nuclear Science Symposium Conference Record（2010）

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摘要

Final results for a comprehensive radiation hardness evaluation of a high performance, low cost, 130 nm SiGe BiCMOS technology are presented. After a survey of several available SiGe technologies, one was chosen in terms of performance, power consumption, radiation hardness, and cost and it is presented as a suitable technology for the front-end electronics of the Inner Detector and the Liquid Argon calorimeter. Gamma, neutron and proton irradiations have been performed up to target dose and fluence values, together with ELDRS assessment.

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关键词

bicmos integrated circuits,germanium radiation detectors,nuclear electronics,particle calorimetry,position sensitive particle detectors,radiation hardening (electronics),silicon radiation detectors,atlas electronics upgrade,sige bicmos technology,dose rate,front-end electronics,gamma irradiation effect,liquid argon calorimeter,neutron irradiation effect,power consumption,proton irradiation effect,radiation hardness evaluation,transistors,radiation hardness,protons,neutrons

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