Demonstration of CAM and TCAM Using Phase Change Devices

Bipin Rajendran,Roger W Cheek,Luis A Lastras,Michele M Franceschini,Matthew J Breitwisch,Alejandro G Schrott,Jing Li,Robert K Montoye,Leland Chang,C Lam

Memory Workshop（2011）

引用 27|浏览32

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摘要

We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially improve density and power consumption by >;5X as compared with conventional SRAM based implementations. Using Monte-Carlo simulations, we also predict the desired characteristics of PCM devices for realizing large, high performance CAM/TCAM chips.

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关键词

monte carlo methods,content-addressable storage,phase change memories,monte-carlo simulation,pcm decives,sram,tcam,content addressable memory,phase change devices,phase change memory technology,ternary cam,resistance,resistors,phase change,phase change memory,chip,computer aided manufacturing,monte carlo simulation,programming

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