Dependence of the filament resistance on the duration of current overshoot

Pragya Shrestha,D Nminibapiel,J P Campbell,K P Cheung,Helmut Baumgart,S Deora,G Bersuker

Integrated Reliability Workshop Final Report（2013）

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摘要

The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.

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关键词

electric resistance,hafnium compounds,random-access storage,hfo2,rram,conductive filament,current overshoot,filament resistance,nonvolatile resistance change memory,overshoot amplitude,parasitic capacitance,reset current

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