Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

T V Dinh,Ralf M T Pijper,T Vanhoucke,Evelyne Gridelet,D B M Klaassen

Bipolar/BiCMOS Circuits and Technology Meeting（2013）

引用 1|浏览3

暂无评分

摘要

Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.

查看译文

关键词

avalanche breakdown,heterojunction bipolar transistors,millimetre wave bipolar transistors,semiconductor device breakdown,hbt linearity,hbt power,kirk effect,rf power amplifier,sige,avalanche effect,on wafer measurements,low voltage,sige hbts,breakdown,cut-off frequency,high voltage,large signal,linearity,power,small signal

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要